Ishiwara, Hiroshi
Ferroelectric-Gate Field Effect Transistor Memories
Part I. Introduction
1. Features, Principles and Development of Ferroelectric–Gate Field-Effect Transistors
Masanori Okuyama
Part II. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors
2. Development of High-Endurance and Long-Retention FeFETs of Pt/Ca
Mitsue Takahashi, Shigeki Sakai
3. Nonvolatile Field-Effect Transistors Using Ferroelectric Doped HfO
Uwe Schroeder, Stefan Slesazeck, Thomas Mikolajick
Part III. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors
4. Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function
Eisuke Tokumitsu
5. ZnO/Pb(Zr,Ti)O
Yukihiro Kaneko
6. Novel Ferroelectric-Gate Field-Effect Thin Film Transistors (FeTFTs): Controlled Polarization-Type FeTFTs
Norifumi Fujimura, Takeshi Yoshimura
Part IV. Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors
7. Non-volatile Ferroelectric Memory Transistors Using PVDF and P(VDF-TrFE) Thin Films
Byung-Eun Park
8. Poly(Vinylidenefluoride-Trifluoroethylene) P(VDF-TrFE)/Semiconductor Structure Ferroelectric-Gate FETs
Yoshihisa Fujisaki
Part V. Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors
9. P(VDF-TeFE)/Organic Semiconductor Structure Ferroelectric-Gate FETs
Takeshi Kanashima, Masanori Okuyama
10. Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(Vinylidene Fluoride Trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel
Sung-Min Yoon
Part VI. Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates
11. Mechanically Flexible Non-volatile Field Effect Transistor Memories with Ferroelectric Polymers
Richard H. Kim, Cheolmin Park
12. Non-volatile Paper Transistors with Poly(vinylidene fluoride-trifluoroethylene) Thin Film Using a Solution Processing Method
Byung-Eun Park
Part VII. Applications and Future Prospects
13. Novel Application of FeFETs to NAND Flash Memory Circuits
Shigeki Sakai, Mitsue Takahashi
14. Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: A Material’s Point of View
Min Hyuk Park, Cheol Seong Hwang
15. Adaptive-Learning Synaptic Devices Using Ferroelectric-Gate Field-Effect Transistors for Neuromorphic Applications
Sung-Min Yoon, Hiroshi Ishiwara
16. Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors
Eisuke Tokumitsu, Tatsuya Shimoda
Nyckelord: Physics, Electronic Circuits and Devices, Electronics and Microelectronics, Instrumentation, Surfaces and Interfaces, Thin Films, Circuits and Systems, Surface and Interface Science, Thin Films
- Utgivare
- Ishiwara, Hiroshi
- Okuyama, Masanori
- Park, Byung-Eun
- Sakai, Shigeki
- Yoon, Sung-Min
- Utgivare
- Springer
- Utgivningsår
- 2016
- Språk
- en
- Utgåva
- 1
- Serie
- Topics in Applied Physics
- Sidantal
- 18 sidor
- Kategori
- Naturvetenskaper
- Format
- E-bok
- eISBN (PDF)
- 9789402408416
- Tryckt ISBN
- 978-94-024-0839-3