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Shin, Changhwan

Variation-Aware Advanced CMOS Devices and SRAM

Shin, Changhwan - Variation-Aware Advanced CMOS Devices and SRAM, e-bok

122,75€

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ISBN: 9789401775977
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Table of contents

1. Introduction: Barriers Preventing CMOS Device Technology from Moving Forward
Changhwan Shin

Part I. Understanding of Process-Induced Random Variation

2. Line Edge Roughness (LER)
Changhwan Shin

3. Random Dopant Fluctuation (RDF)
Changhwan Shin

4. Work Function Variation (WFV)
Changhwan Shin

Part II. Variation-Aware Advanced CMOS Devices

5. Tri-Gate MOSFET
Changhwan Shin

6. Quasi-Planar Trigate (QPT) Bulk MOSFET
Changhwan Shin

7. Tunnel FET (TFET)
Changhwan Shin

Part III. Static Random Access Memory (SRAM) Based on Advanced CMOS Devices

8. Applications in Static Random Access Memory (SRAM)
Changhwan Shin

Nyckelord: Physics, Electronic Circuits and Devices, Circuits and Systems, Semiconductors, Electronics and Microelectronics, Instrumentation

Författare
Utgivare
Springer
Utgivningsår
2016
Språk
en
Utgåva
1
Serie
Springer Series in Advanced Microelectronics
Sidantal
7 sidor
Kategori
Naturvetenskaper
Format
E-bok
eISBN (PDF)
9789401775977
Tryckt ISBN
978-94-017-7595-3

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