Shin, Changhwan
Variation-Aware Advanced CMOS Devices and SRAM
1. Introduction: Barriers Preventing CMOS Device Technology from Moving Forward
Changhwan Shin
Part I. Understanding of Process-Induced Random Variation
2. Line Edge Roughness (LER)
Changhwan Shin
3. Random Dopant Fluctuation (RDF)
Changhwan Shin
4. Work Function Variation (WFV)
Changhwan Shin
Part II. Variation-Aware Advanced CMOS Devices
5. Tri-Gate MOSFET
Changhwan Shin
6. Quasi-Planar Trigate (QPT) Bulk MOSFET
Changhwan Shin
7. Tunnel FET (TFET)
Changhwan Shin
Part III. Static Random Access Memory (SRAM) Based on Advanced CMOS Devices
8. Applications in Static Random Access Memory (SRAM)
Changhwan Shin
Nyckelord: Physics, Electronic Circuits and Devices, Circuits and Systems, Semiconductors, Electronics and Microelectronics, Instrumentation
- Författare
- Shin, Changhwan
- Utgivare
- Springer
- Utgivningsår
- 2016
- Språk
- en
- Utgåva
- 1
- Serie
- Springer Series in Advanced Microelectronics
- Sidantal
- 7 sidor
- Kategori
- Naturvetenskaper
- Format
- E-bok
- eISBN (PDF)
- 9789401775977
- Tryckt ISBN
- 978-94-017-7595-3