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Li, Zhiqiang

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Li, Zhiqiang - The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices, e-bok

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ISBN: 9783662496831
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Table of contents

1. Introduction
Zhiqiang Li

2. Ge-based Schottky Barrier Height Modulation Technology
Zhiqiang Li

3. Metal Germanide Technology
Zhiqiang Li

4. Contact Resistance of Ge Devices
Zhiqiang Li

5. Conclusions and Prospects
Zhiqiang Li

Nyckelord: Physics, Semiconductors, Electronic Circuits and Devices, Nanoscale Science and Technology, Solid State Physics

Författare
Utgivare
Springer
Utgivningsår
2016
Språk
en
Utgåva
1
Serie
Springer Theses
Kategori
Naturvetenskaper
Format
E-bok
eISBN (PDF)
9783662496831
Tryckt ISBN
978-3-662-49681-7

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