Li, Zhiqiang
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Table of contents
1. Introduction
Zhiqiang Li
2. Ge-based Schottky Barrier Height Modulation Technology
Zhiqiang Li
3. Metal Germanide Technology
Zhiqiang Li
4. Contact Resistance of Ge Devices
Zhiqiang Li
5. Conclusions and Prospects
Zhiqiang Li
Nyckelord: Physics, Semiconductors, Electronic Circuits and Devices, Nanoscale Science and Technology, Solid State Physics
- Författare
- Li, Zhiqiang
- Utgivare
- Springer
- Utgivningsår
- 2016
- Språk
- en
- Utgåva
- 1
- Serie
- Springer Theses
- Kategori
- Naturvetenskaper
- Format
- E-bok
- eISBN (PDF)
- 9783662496831
- Tryckt ISBN
- 978-3-662-49681-7