Defects in High-k Gate Dielectric Stacks

1. PVD-HIGH-K GATE DIELECTRICS WITH FUSI GATE AND INFLUENCE OF PDA TREATMENT ON ON-STATE DRIVE CURRENT
MASAAKI NIWA, RIICHIROU MITSUHASHI, KAZUHIKO YAMAMOTO, SHIGENORI HAYASHI, AUDE ROTHCHILD, STEFAN KUBICEK, STEFAN DEGENDT, SERGE BIESEMANS

2. EXTREMELY HIGH-DENSITY CAPACITORS WITH ALD HIGH-K DIELECTRIC LAYERS
JOHAN KLOOTWIJK, ANTON KEMMEREN, ROB WOLTERS, FRED ROOZEBOOM, JAN VERHOEVEN, ERIC VAN DEN HEUVEL

3. TOWARDS UNDERSTANDING OF PROCESSINGNANOSTRUCTURE- PROPERTY INTER-RELATIONSHIPS IN HIGHK/METAL GATE STACKS
P. MAJHI, G. BERSUKER, B.H. LEE

4. ON THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-? GATE DIELECTRICS
D.A. BUCHANAN, D. FELNHOFER

5. INELASTIC ELECTRON TUNNELLING SPECTROSCOPY (IETS) STUDY OF HIGH-K DIELECTRICS
T.P. MA, WEI HE, MIAOMIAO WANG

6. CHARACTERIZATION AND MODELING OF DEFECTS IN HIGH-K MEASUREMENTS LAYERS THROUGH FAST ELECTRICAL TRANSIENT
JEROME MITARD, CHARLES LEROUX, GILLES REIMBOLD, XAVIER GARROS, FRANÇOIS MARTIN, GERARD GHIBAUDO

7. CHARACTERIZATION OF ELECTRICALLY ACTIVE DEFECTS IN HIGH-K GATE DIELECTRICS USING CHARGE PUMPING
ERIC M. VOGEL1, DA-WEI HEH

8. IMPACT OF HIGH-? PROPERTIES ON MOSFET ELECTRICAL CHARACTERISTICS
LUIGI PANTISANO, L-Å. RAGNARSSON, M. HOUSSA, R. DEGRAEVE, G. GROESENEKEN, T. SCHRAM, S. DEGENDT, M. HEYNS, V. AFANAS’EV

9. STRUCTURAL EVOLUTION AND POINT DEFECTS IN METAL OXIDE-BASED HIGH-? GATE DIELECTRICS
PAUL C. MCINTYRE, HYOUNGSUB KIM, KRISHNA C. SARASWAT

10. DISORDERED STRUCTURE AND DENSITY OF GAP STATES IN HIGH-PERMITTIVITY THIN SOLID FILMS
KAUPO KUKLI, SALVADOR DUEÑAS, HELENA CASTÁN, HECTOR GARCÍA, JUAN BARBOLLA, JAAN AARIK, ALEKS AIDLA, MIKKO RITALA, MARKKU LESKELÄ

11. INTERDIFFUSION STUDIES OF HIGH-K GATE DIELECTRIC STACK CONSTITUENTS
P. SIVASUBRAMIANI, M.A. QUEVEDO-LOPEZ, T.H. LEE, M.J. KIM, B.E. GNADE, R.M. WALLACE

12. XPS/LEIS STUDY OF HIGH-K RARE EARTH (LU, YB) OXIDES AND SILICATES ON SI: THE EFFECT OF ANNEALING ON MICROSTRUCTURE EVOLUTION
ANDREI ZENKEVICH, YURI LEBEDINSKII, GIOVANNA SCAREL, MARCO FANCIULLI

13. TRANSIENT CHARGING EFFECTS AND ITS IMPLICATIONS TO THE RELIABILITY OF HIGH-K DIELECTRICS
BYOUNG HUN LEE, RINO CHOI, RUSTY HARRIS, S.A. KRISHAN, CHADWIN D. YOUNG, JOHNNY SIM, GENNADI BERSUKER

14. DEFECT ENERGY LEVELS IN HIGH-K GATE OXIDES
J. ROBERTSON, K. XIONG, S.J. CLARK, S.J. CLARK

15. DEFECT-RELATED ISSUES IN HIGH-K DIELECTRICS
SOKRATES T. PANTELIDES, M.H. EVANS, D.M. FLEETWOOD, E. P. GUSEV, J. D. JOANNOPOULOS, Z. LU, S. J. PENNYCOOK, S. N. RASHKEEV, R. D. SCHRIMPF, L. TSETSERIS, K. VAN BENTHEM, X-G. ZHANG, X. J. ZHOU

16. STUDYING THE EFFECTS OF NITROGEN AND HAFNIUM INCORPORATION INTO THE SIO2/SI(100) INTERFACE WITH REPLICA-EXCHANGE MOLECULAR DYNAMICS AND DENSITYFUNCTIONAL- THEORY CALCULATIONS
WANDA ANDREONI, ALESSANDRO CURIONI, DOMINIK FISCHER, SALOMON R. BILLETER, CARLO A. PIGNEDOLI

17. PROBING POINT DEFECTS AND TRAPS IN STACKS OF ULTRATHIN HAFNIUM OXIDES ON (100)SI BY ELECTRON SPIN RESONANCE: INTERFACES AND N INCORPORATION
A. STESMANS, V.V. AFANAS’EV

18. MECHANISM OF CHARGE TRAPPING REDUCTION IN SCALED HIGH-? GATE STACKS
G. BERSUKER, B. H. LEE, H.R. HUFF, J. GAVARTIN, A. SHLUGER

19. ELECTRICALLY ACTIVE INTERFACE AND BULK SEMICONDUCTOR DEFECTS IN HIGH-K / GERMANIUM STRUCTURES
A. DIMOULAS

20. DEFECT AND COMPOSITION ANALYSIS OF AS-DEPOSITED AND NITRIDED (100)SI / SIO2/ HF1-XSIXO2 STACKS BY ELECTRON PARAMAGNETIC RESONANCE AND ION BEAM ANALYSIS
H.J. VON BARDELEBEN, J.L. CANTIN, J.J. GANEM, I. TRIMAILLE, E.P. GUSEV

21. DEFECTS AT THE HIGH-? /SEMICONDUCTOR INTERFACES INVESTIGATED BY SPIN DEPENDENT SPECTROSCOPIES
MARCO FANCIULLI, OMAR COSTA, SILVIA BALDOVINO, SIMONE COCCO, GABRIELE SEGUINI, ENRICO PRATI, GIOVANNA SCAREL

22. FIXED OXIDE CHARGE IN Ru-BASED CHEMICAL VAPOUR DEPOSITED HIGH-? GATE STACKS
KAROL FROHLICH, ROMAN LUPTÁK1, MILAN ?APAJNA, KRISTÍNA HUŠEKOVÁ, U. WEBER, P.K. BAUMANN, J. LINDNER

23. ELECTRICAL DEFECTS IN ATOMIC LAYER DEPOSITED HFO2 FILMS ON SILICON: INFLUENCE OF PRECURSOR CHEMISTRIES AND SUBSTRATE TREATMENT
SALVADOR DUEÑAS, HELENA CASTÁN, HÉCTOR GARCÍA, LUIS BAILÓN, KAUPO KUKLI, MIKKO RITALA, MARKKU LESKELÄ

24. THE EFFECTS OF RADIATION AND CHARGE TRAPPING ON THE RELIABILITY OF ALTERNATIVE GATE DIELECTRICS
J. A. FELIX, M. R. SHANEYFELT, J. R. SCHWANK, P. E. DODD, D. M. FLEETWOOD, X. J. ZHOU, E. P. GUSEV

25. CAN LEIS SPECTRA CONTAIN INFORMATION ON SURFACE ELECTRONIC STRUCTURE OF HIGH-K DIELECTRICS?
Y. LEBEDINSKII, A. ZENKEVICH, M. PUSHKIN, N. BARANTSEV, V. TROYAN, V. NEVOLIN

26. LOW SUBSTRATE DAMAGE HIGH-K REMOVAL AFTER GATE PATTERNING
DENIS SHAMIRYAN, VASILE PARASCHIV, MARTINE CLAES, WERNER BOULLART

27. MONITORING OF FERMI LEVEL VARIATIONS AT METAL/HIGH-K INTERFACES WITH IN SITU X-RAY PHOTOELECTRON SPECTROSCOPY
Y. LEBEDINSKII, A. ZENKEVICH, E.P. GUSEV

28. STRUCTURE, COMPOSITION AND ORDER AT INTERFACES OF CRYSTALLINE OXIDES AND OTHER HIGH-K MATERIALS ON SILICON
TORGNY GUSTAFSSON, ERIC GARFUNKEL, LYUDMILA GONCHAROVA, DMITRI STARODUB, ROBIN BARNES, MATEUS DALPONTE, GENNADI BERSUKER, BRENDAN FORAN, PAT LYSAGHT, DARRELL G. SCHLOM, VENU VAITHYANATHAN, MINGHWEI HONG, J. RAYNIEN KWO

29. INTERFACE FORMATION DURING EPITAXIAL GROWTH OF BINARY METAL OXIDES ON SILICON
H. J. OSTEN, A. FISSEL, O. KIRFEL, Z. ELASSAR, E. BUGIEL, M. CZERNOHORSKY

30. EFFECT OF CHEMICAL ENVIRONMENT AND STRAIN ON OXYGEN VACANCY FORMATION ENERGIES AT SILICONSILICON OXIDE INTERFACES
T.M. HENDERSON, J.C. GREER, G. BERSUKER, A. KORKIN, R.J. BARTLETT

31. DIELECTRIC AND INFRARED PROPERTIES OF ULTRATHIN SiO2 LAYERS ON Si(100)
F. GIUSTINO, A. PASQUARELLO

32. THE (1 0 0) SURFACE OF SEMICONDUCTOR SILICON (IN PASSIVATION PRACTICAL CONDITIONS): PREPARATION, EVOLUTION,
G.F. CEROFOLINI

33. CORRELATION BETWEEN DEFECTS, LEAKAGE CURRENTS AND CONDUCTION MECHANISMS IN THIN HIGH-K DIELECTRIC LAYERS
A. PASKALEVA, E. ATANASSOVA, M. LEMBERGER, A.J. BAUER

34. ELECTRONIC STRUCTURE OF ZRO2 AND HFO2
T.V. PEREVALOV, A.V. SHAPOSHNIKOV, K.A. NASYROV, D.V. GRITSENKO, V.A. GRITSENKO, V.M. TAPILIN

35. HIGH-K GATE STACKS ELECTRICAL CHARACTERIZATION AT THE NANOSCALE USING CONDUCTIVE-AFM
MONTSERRAT NAFRIA, XAVIER BLASCO, MARC PORTI, LIDIA AGUILERA, XAVIER AYMERICH

36. MAGNETIC DEFECTS IN PRISTINE AND HYDROGENTERMINATED NANODIAMONDS
VLADIMIR OSIPOV, MARINA BAIDAKOVA, KAZUYUKI TAKAI, TOSHIAKI ENOKI, ALEXANDER VUL

37. ON THE IMPORTANCE OF ATOMIC PACKING IN DETERMINING DIELECTRIC PERMITTIVITIES
A.H. EDWARDS, T. BUSANI, R.A.B. DEVINE, A. PINEDA

38. INVESTIGATION OF THE ELECTRONIC PROPERTIES OF THIN DIELECTRIC FILMS BY SCANNING PROBE MICROSCOPY
D.A. ANTONOV, D.O. FILATOV, A.V. KRUGLOV, G.A. MAXIMOV, A.V. ZENKEVICH, Y. LEBEDINSKII

Nyckelord: Engineering, Electronic and Computer Engineering, Condensed Matter, Physics and Applied Physics in Engineering, Electronics and Microelectronics, Instrumentation