Adhikary, Sourav
Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors
Table of contents
1. Introduction
Sourav Adhikary, Subhananda Chakrabarti
2. Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots
Sourav Adhikary, Subhananda Chakrabarti
3. Effect of Rapid-Thermal Annealing on Quantum Dot Properties
Sourav Adhikary, Subhananda Chakrabarti
4. In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping
Sourav Adhikary, Subhananda Chakrabarti
5. Effects of RTA on Quaternary Capped QDIP Characteristics
Sourav Adhikary, Subhananda Chakrabarti
6. Summary and Future Work
Sourav Adhikary, Subhananda Chakrabarti
Avainsanat: Engineering, Circuits and Systems, Electronic Circuits and Devices, Optics, Lasers, Photonics, Optical Devices, Signal, Image and Speech Processing
- Tekijä(t)
- Adhikary, Sourav
- Chakrabarti, Subhananda
- Julkaisija
- Springer
- Julkaisuvuosi
- 2018
- Kieli
- en
- Painos
- 1
- Sivumäärä
- 13 sivua
- Kategoria
- Tekniikka, energia, liikenne
- Tiedostomuoto
- E-kirja
- eISBN (PDF)
- 9789811052903
- Painetun ISBN
- 978-981-10-5289-7
