Variation-Aware Advanced CMOS Devices and SRAM

1. Introduction: Barriers Preventing CMOS Device Technology from Moving Forward
Changhwan Shin

Part I. Understanding of Process-Induced Random Variation

2. Line Edge Roughness (LER)
Changhwan Shin

3. Random Dopant Fluctuation (RDF)
Changhwan Shin

4. Work Function Variation (WFV)
Changhwan Shin

Part II. Variation-Aware Advanced CMOS Devices

5. Tri-Gate MOSFET
Changhwan Shin

6. Quasi-Planar Trigate (QPT) Bulk MOSFET
Changhwan Shin

7. Tunnel FET (TFET)
Changhwan Shin

Part III. Static Random Access Memory (SRAM) Based on Advanced CMOS Devices

8. Applications in Static Random Access Memory (SRAM)
Changhwan Shin

Avainsanat: Physics, Electronic Circuits and Devices, Circuits and Systems, Semiconductors, Electronics and Microelectronics, Instrumentation