Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

1. Introduction
Jacopo Franco, Ben Kaczer, Guido Groeseneken

2. Degradation Mechanisms
Jacopo Franco, Ben Kaczer, Guido Groeseneken

3. Techniques and Devices
Jacopo Franco, Ben Kaczer, Guido Groeseneken

4. Negative Bias Temperature Instability in (Si)Ge pMOSFETs
Jacopo Franco, Ben Kaczer, Guido Groeseneken

5. Negative Bias Temperature Instability in Nanoscale Devices
Jacopo Franco, Ben Kaczer, Guido Groeseneken

6. Channel Hot Carriers and Other Reliability Mechanisms
Jacopo Franco, Ben Kaczer, Guido Groeseneken

7. Conclusions and Perspectives
Jacopo Franco, Ben Kaczer, Guido Groeseneken

Avainsanat: Physics, Semiconductors, Circuits and Systems, Optical and Electronic Materials, Electronic Circuits and Devices