Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

1. Theoretical Modelling of Rare Earth Dopants in GaN
R. Jones, B. Hourahine

2. RE Implantation and Annealing of III-Nitrides
Katharina Lorenz, Eduardo Alves, Florence Gloux, Pierre Ruterana

3. Lattice Location of RE Impurities in IIINitrides
André Vantomme, Bart Vries, Ulrich Wahl

4. Electroluminescent Devices Using RE-Doped III-Nitrides
Akihiro Wakahara

5. Er-Doped GaN and InxGa1-xN for Optical Communications
R. Dahal, J. Y. Lin, H. X. Jiang, J. M. Zavada

6. Rare-Earth-Doped GaN Quantum Dot
B. Daudin

7. Visible Luminescent RE-doped GaN, AlGaN and AlInN
Robert Martin

8. Combined Excitation Emission Spectroscopy (CEES) of RE Ions in Gallium Nitride
Volkmar Dierolf

9. Excitation Mechanisms of RE Ions in Semiconductors
Alain Braud

10. High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd
O. Brandt, S. Dhar, L. Pérez, V. Sapega

11. Summary and Prospects for Future Work

Avainsanat: Physics, Optics, Optoelectronics, Plasmonics and Optical Devices, Quantum Optics