Fundamentals of Bias Temperature Instability in MOS Transistors

1. Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs
Souvik Mahapatra, Nilesh Goel, Subhadeep Mukhopadhyay

2. Characterization Methods for BTI Degradation and Associated Gate Insulator Defects
Souvik Mahapatra, Nilesh Goel, Ankush Chaudhary, Kaustubh Joshi, Subhadeep Mukhopadhyay

3. Physical Mechanism of BTI Degradation—Direct Estimation of Trap Generation and Trapping
Subhadeep Mukhopadhyay, Souvik Mahapatra

4. Physical Mechanism of BTI Degradation—Modeling of Process and Material Dependence
Souvik Mahapatra, Kaustubh Joshi, Subhadeep Mukhopadhyay, Ankush Chaudhary, Nilesh Goel

5. Reaction-Diffusion Model
Ahmad Ehteshamul Islam, Nilesh Goel, Souvik Mahapatra, Muhammad Ashraful Alam

6. Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs
Nilesh Goel, Souvik Mahapatra

7. Erratum to: Fundamentals of Bias Temperature Instability in MOS Transistors
Souvik Mahapatra

Avainsanat: Engineering, Circuits and Systems, Electronics and Microelectronics, Instrumentation, Solid State Physics