Li, Zhiqiang
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Table of contents
1. Introduction
Zhiqiang Li
2. Ge-based Schottky Barrier Height Modulation Technology
Zhiqiang Li
3. Metal Germanide Technology
Zhiqiang Li
4. Contact Resistance of Ge Devices
Zhiqiang Li
5. Conclusions and Prospects
Zhiqiang Li
Avainsanat: Physics, Semiconductors, Electronic Circuits and Devices, Nanoscale Science and Technology, Solid State Physics
- Tekijä(t)
- Li, Zhiqiang
- Julkaisija
- Springer
- Julkaisuvuosi
- 2016
- Kieli
- en
- Painos
- 1
- Sarja
- Springer Theses
- Kategoria
- Eksaktit luonnontieteet
- Tiedostomuoto
- E-kirja
- eISBN (PDF)
- 9783662496831
- Painetun ISBN
- 978-3-662-49681-7