Advanced Gate Stacks for High-Mobility Semiconductors

1. Strained-Si CMOS Technology
S. Takagi

2. High Current Drivability MOSFET Fabricated on Si(110) Surface
A. Teramoto, T. Ohmi

3. Advanced High-Mobility Semiconductor-on-Insulator Materials
B. Ghyselen, I. Cayrefourcq, M. Kennard, F. Letertre, T. Akatsu, G. Celler, C. Mazure

4. Passivation and Characterization of Germanium Surfaces
S. R. Amy, Y. J. Chabal

5. Interface Engineering for High-? Ge MOSFETs
S. J. Lee, C. Zhu, D. L. Kwong

6. Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-?/Metal Gate Metal-Oxide-Semiconductor Devices
D. Q. Kelly, J. J. -H. Chen, S. Guha, S. K. Banerjee

7. Modeling of Growth of High-? Oxides on Semiconductors
C. J. Först, C. A. Ashman, K. Schwarz, P. E. Blöchl

8. Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs
S. Spiga, C. Wiemer, G. Scarel, G. Seguini, M. Fanciulli, A. Zenkevich, Yu. Lebedinskii

9. Point Defects in Stacks of High-? Metal Oxides on Ge: Contrast with the Si Case
A. Stesmans, V. V. Afanas’ev

10. High ? Gate Dielectrics for Compound Semiconductors
J. Kwo, M. Hong

11. Interface Properties of High-? Dielectrics on Germanium
A. Toriumi, K. Kita, M. Toyama, H. Nomura

12. A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-? Materials and Films
V. Fiorentini, P. Delugas, A. Filippetti

13. Germanium Nanodevices and Technology
C. O. Chui, K. C. Saraswat

14. Opportunities and Challenges of Germanium Channel MOSFETs
H. Shang, E. P. Gusev, M. M. Frank, J. O. Chu, S. Bedell, M. Gribelyuk, J. A. Ott, X. Wang, K. W. Guarini, M. Ieong

15. Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates
M. Meuris, B. Jaeger, J. Steenbergen, R. Bonzom, M. Caymax, M. Houssa, B. Kaczer, F. Leys, K. Martens, K. Opsomer, A. M. Pourghaderi, A. Satta, E. Simoen, V. Terzieva, E. Moorhem, G. Winderickx, R. Loo, T. Clarysse, T. Conard, A. Delabie, D. Hellin, T. Janssens, B. Onsia, S. Sioncke, P. W. Mertens, J. Snow, S. Elshocht, W. Vandervorst, P. Zimmerman, D. Brunco, G. Raskin, F. Letertre, T. Akatsu, T. Billon, M. Heyns

16. Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics
P. D. Ye, G. D. Wilk, M. M. Frank

17. Fabrication of MBE High-? MOSFETs in a Standard CMOS Flow
L. Pantisano, T. Conard, T. Scram, W. Deweerd, S. Gendt, M. Heyns, Z. M. Rittersma, C. Marchiori, M. Sousa, J. Fompeyrine, J. -P. Locquet

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Avainsanat: TECHNOLOGY & ENGINEERING / General TEC000000