Power GaN Devices

1. Properties and Advantages of Gallium Nitride
Daisuke Ueda

2. Substrates and Materials
Stacia Keller

3. GaN-on-Silicon CMOS-Compatible Process
Denis Marcon, Steve Stoffels

4. Lateral GaN Devices for Power Applications (from kHz to GHz)
Umesh K. Mishra, Matthew Guidry

5. Vertical Gallium Nitride Technology
Srabanti Chowdhury

6. GaN-Based Nanowire Transistors
Elison Matioli, Bin Lu, Daniel Piedra, Tomás Palacios

7. Deep-Level Characterization: Electrical and Optical Methods
Andrew M. Armstrong, Robert J. Kaplar

8. Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping
Gilberto Curatola, Giovanni Verzellesi

9. Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities
Isabella Rossetto, Davide Bisi, Carlo Santi, Antonio Stocco, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

10. Cascode Gallium Nitride HEMTs on Silicon: Structure, Performance, Manufacturing, and Reliability
Primit Parikh

11. Gate Injection Transistors: E-mode Operation and Conductivity Modulation
Tetsuzo Ueda

12. Fluorine-Implanted Enhancement-Mode Transistors
Kevin J. Chen

13. Drift Effects in GaN High-Voltage Power Transistors
Joachim Würfl

14. Reliability Aspects of 650-V-Rated GaN Power Devices
Peter Moens, Aurore Constant, Abhishek Banerjee

15. Switching Characteristics of Gallium Nitride Transistors: System-Level Issues
Fred Lee, Qiang Li, Xiucheng Huang, Zhengyang Liu

Avainsanat: Engineering, Power Electronics, Electrical Machines and Networks, Semiconductors, Optical and Electronic Materials, Energy Systems, Electronics and Microelectronics, Instrumentation