New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface

1. Introduction
Lachlan E. Black

2. Surface Recombination Theory
Lachlan E. Black

3. Al _2




2



O _3




3



Deposition and Characterisation
Lachlan E. Black

4. Electrical Properties of the Si–Al _{2}




2



O _{3}




3



Interface
Lachlan E. Black

5. Influence of Deposition Parameters
Lachlan E. Black

6. Effect of Post-Deposition Thermal Processing
Lachlan E. Black

7. Effect of Surface Dopant Concentration
Lachlan E. Black

8. Effect of Surface Orientation andMorphology
Lachlan E. Black

9. Relationship Between Al _{3} Bulk and Interface Properties
Lachlan E. Black

10. Conclusion
Lachlan E. Black

Avainsanat: Engineering, Power Electronics, Electrical Machines and Networks, Surfaces and Interfaces, Thin Films, Energy Technology