Wide Band Gap Semiconductor Nanowires 1: Low-Dimensionality Effects and Growth

GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms
of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.

Avainsanat: Wide Band Gap Semiconductor Nanowires for Optical Devices: GaN and ZnO Case; Guy Feuillet; Vincent Consonni; GaN and ZnO materials; nanowire heterostructures; Single nanowires; ZnO nanowire-based devices; InGaN and AlGaN nanowire heterostructures: QWs and alloys; AlGaN nanowire heterostructures; InGaN nanowire heterostructures; Heterojunction: ZnO/GaN and others