Nanoscaled Semiconductor-on-Insulator Structures and Devices

1. Status and trends in SOI nanodevices
Francis Balestra

2. Non-Planar Devices for Nanoscale CMOS
Max C. Lemme, H. D. B. Gottlob, Heinrich Kurz

3. High-? Dielectric Stacks for Nanoscaled SOI Devices
Steve Hall, O. Buiu, I. Z. Mitrovic, Y. Lu, W. M. Davey

4. Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogen Transfer
Vladimir Popov, Ida Tyschenko, Alexander Cherkov, Matthias Voelskow

5. Fluorine –Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrates
Huda Abdel Wahab El Mubarek, Peter Ashburn

6. Suspended Silicon-On-Insulator Nanowires for the Fabrication of Quadruple Gate MOSFETs
Vikram Passi, Benoit Olbrechts, Jean-Pierre Raskin, Jens Bolten, Thomas Mollenhauer, Thorsten Wahlbrink, Max C. Lemme, Heinrich Kurz

7. Integration of silicon Single-Electron Transistors Operating at Room Temperature
Toshiro Hiramoto

8. SiGe Nanodots in Electro-Optical SOI Devices
Anatoly V. Dvurechenskii, A. I. Yakimov, N. P. Stepina, V. V. Kirienko, P. L. Novikov

9. Nanowire Quantum Effects in Trigate SOI MOSFETs
Jean-Pierre Colinge

10. Semiconductor Nanostructures and Devices
Joachim Knoch, Hans Lüth

11. MuGFET CMOS Process with Midgap Gate Material
W. Xiong, C. R. Cleavelin, T. Schulz, K. Schrüfer, P. Patruno, Jean-Pierre Colinge

12. Doping Fluctuation Effects in Multiple-Gate SOI MOSFETs
C. A. Colinge, W. Xiong, C. R. Cleavelin, Jean-Pierre Colinge

13. SiGeC HBTs: impact of C on Device Performance
I. Z. Mitrovic, Huda Abdel Wahab El Mubarek, O. Buiu, Steve Hall, Peter Ashburn, J. Zhang

14. Noise Research of Nanoscaled SOI Devices
N. Lukyanchikova

15. Electrical Characterization and Special Properties of FINFET Structures
T. Rudenko, Valeria Kilchytska, N. Collaert, Alexei N. Nazarov, M. Jurczak, Denis Flandre

16. Substrate Effect on the Output Conductance Frequency Response of SOI MOSFETs
Valeria Kilchytska, David Levacq, Dimitri Lederer, Guillaume Pailloncy, Jean-Pierre Raskin, Denis Flandre

17. Investigation of Compressive Strain Effects Induced by STI and ESL
S. Zaouia, S. Cristoloveanu, A. H. Perera

18. Charge Trapping Phenomena in Single Electron NVM SOI Devices Fabricated by a Self-Aligned Quantum DOT Technology
Alexei N. Nazarov, Vladimir S. Lysenko, Xiaohui Tang, Nicolas Reckinger, Vincent Bayot

19. Variability in Nanoscale UTB SOI Devices and its Impact on Circuits and Systems
Asen Asenov, Khairulmizam Samsudin

20. Electron Transport in Silicon-on-Insulator Nanodevices
F. Gámiz, A. Godoy, C. Sampedro

21. All Quantum Simulation of Ultrathin SOI MOSFETs
A. Orlikovsky, V. Vyurkov, V. Lukichev, I. Semenikhin, A. Khomyakov

22. Resonant Tunneling Devices on SOI Basis
Bogdan Majkusiak

23. Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions
Viktor Sverdlov, Enzo Ungersboeck, Hans Kosina

24. Three-Dimensional (3-D) Analytical Modeling of the Threshold Voltage, DIBL and Subthreshold Swing of Cylindrical Gate all Around Mosfets
H. A. El Hamid, B. Iñguez, Jaume Roig

Avainsanat: Chemistry, Optical and Electronic Materials, Nanotechnology, Electronic and Computer Engineering, Electronics and Microelectronics, Instrumentation