GRABINSKI, WLADYSLAW
TRANSISTOR LEVEL MODELING FOR ANALOG/RF IC DESIGN
1. 2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures
Daniel Donoval, Andrej Vrbicky, Ales Chvala, Peter Beno
2. PSP: An advanced surface-potential-based MOSFET model
R.van Langevelde, G. Gildenblat
3. EKV3.0: An advanced charge based MOS transistor model.A design-oriented MOS transistor compact model
Matthias Bucher, Antonios Bazigos, François Krummenacher, Jean-Micehl Sallese, Christian Enz
4. Modelling using high-frequency measurements
DOMINIQUE SCHREURS
5. Empirical FET models
Iltcho Angelov
6. Modeling the SOI MOSFET nonlinearities. An empirical approach
B. Parvais, A. Siligaris
7. Circuit level RF modeling and design
Nobuyuki Itoh
8. On incorporating parasitic quantum effects in classical circuit simulations
Frank Felgenhauer, Maik Begoin, Wolfgang Mathis
9. Compact modeling of the MOSFET in VHDL-AMS
Christophe Lallement, François Pêcheux, Alain Vachoux, Fabien Prégaldiny
10. Compact modeling in Verilog-A
Boris Troyanovsky, Patrick O'Halloran, Marek Mierzwinski
DRM-restrictions
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Avainsanat: TECHNOLOGY & ENGINEERING / General TEC000000
- Tekijä(t)
- GRABINSKI, WLADYSLAW
- NAUWELAERS, BART
- SCHREURS, DOMINIQUE
- Julkaisija
- Springer
- Julkaisuvuosi
- 2006
- Kieli
- en
- Painos
- 1
- Kategoria
- Tekniikka, energia, liikenne
- Tiedostomuoto
- E-kirja
- eISBN (PDF)
- 9781402045561