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GRABINSKI, WLADYSLAW

TRANSISTOR LEVEL MODELING FOR ANALOG/RF IC DESIGN

GRABINSKI, WLADYSLAW - TRANSISTOR LEVEL MODELING FOR ANALOG/RF IC DESIGN, e-kirja

95,65€

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ISBN: 9781402045561
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Table of contents

1. 2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures
Daniel Donoval, Andrej Vrbicky, Ales Chvala, Peter Beno

2. PSP: An advanced surface-potential-based MOSFET model
R.van Langevelde, G. Gildenblat

3. EKV3.0: An advanced charge based MOS transistor model.A design-oriented MOS transistor compact model
Matthias Bucher, Antonios Bazigos, François Krummenacher, Jean-Micehl Sallese, Christian Enz

4. Modelling using high-frequency measurements
DOMINIQUE SCHREURS

5. Empirical FET models
Iltcho Angelov

6. Modeling the SOI MOSFET nonlinearities. An empirical approach
B. Parvais, A. Siligaris

7. Circuit level RF modeling and design
Nobuyuki Itoh

8. On incorporating parasitic quantum effects in classical circuit simulations
Frank Felgenhauer, Maik Begoin, Wolfgang Mathis

9. Compact modeling of the MOSFET in VHDL-AMS
Christophe Lallement, François Pêcheux, Alain Vachoux, Fabien Prégaldiny

10. Compact modeling in Verilog-A
Boris Troyanovsky, Patrick O'Halloran, Marek Mierzwinski

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Avainsanat: TECHNOLOGY & ENGINEERING / General TEC000000

Tekijä(t)
 
 
Julkaisija
Springer
Julkaisuvuosi
2006
Kieli
en
Painos
1
Kategoria
Tekniikka, energia, liikenne
Tiedostomuoto
E-kirja
eISBN (PDF)
9781402045561

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