Fujita, Masahiro
Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Application to LSI
Key features:
• Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices.
• Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention.
• Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.
Avainsanat: oxide semiconductor; CAAC IGZO; field-effect transistor; off-state current; normally-off computing; central processing unit; cpu; field-programmable gate array; fpga; random access memory; non-volatile memory; Image sensors, Semiconductors, Semiconductors
- Toimittaja
- Fujita, Masahiro
- Yamazaki, Shunpei
- Julkaisija
- John Wiley and Sons, Inc.
- Julkaisuvuosi
- 2016
- Kieli
- en
- Painos
- 1
- Sarja
- Wiley Series in Display Technology
- Sivumäärä
- 376 sivua
- Kategoria
- Tekniikka, energia, liikenne
- Tiedostomuoto
- E-kirja
- eISBN (ePUB)
- 9781119247432
- Painetun ISBN
- 9781119247340