Gao, Jianjun
Heterojunction Bipolar Transistors for Circuit Design: Microwave Modeling and Parameter Extraction
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors
- Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs
- Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning
- Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design
- Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Avainsanat: characterization of heterojunction bipolar transistors; basic modeling techniques for semiconductor devices; basic concepts of heterojunction bipolar transistor; state-of-the-art modeling; equivalent circuit parameter extraction method; heterojunction bipolar transistors; signal and noise parameters of two-port networks; basic operation mechanisms; modeling techniques; bipolar junction transistor and heterojunction bipolar transistor; electronic circuits, circuit related modeling techniques, semiconductor device models; circuit simulators; electrical/RF engineering-related theory; equivalent circuits; matrix descriptions; noise; small and large signal analysis methods, Semiconductors, Solid State Physics, Semiconductors, Solid State Physics
- Tekijä(t)
- Gao, Jianjun
- Julkaisija
- John Wiley and Sons, Inc.
- Julkaisuvuosi
- 2015
- Kieli
- en
- Painos
- 1
- Sivumäärä
- 280 sivua
- Kategoria
- Tekniikka, energia, liikenne
- Tiedostomuoto
- E-kirja
- eISBN (ePUB)
- 9781118921555
- Painetun ISBN
- 9781118921524