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Ashburn, Peter

SiGe Heterojunction Bipolar Transistors

Ashburn, Peter - SiGe Heterojunction Bipolar Transistors, e-kirja

112,10€

E-kirja, PDF, Adobe DRM-suojattu
ISBN: 9780470090732
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Tulostus86 sivua ja lisä sivu kertyy joka 9. tunti, ylärajana 86 sivua
Kopioi leikepöydälle14 poimintoa

SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices.

The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications.

This book features:

  • SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications
  • Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors
  • Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology.

Essential reading for practising microelectronics engineers and researchers.

Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

Avainsanat: TECHNOLOGY & ENGINEERING / Electronics / Circuits / General TEC008010

Tekijä(t)
Julkaisija
John Wiley and Sons, Inc.
Julkaisuvuosi
2004
Kieli
en
Painos
1
Sivumäärä
286 sivua
Kategoria
Tekniikka, energia, liikenne
Tiedostomuoto
E-kirja
eISBN (PDF)
9780470090732
Painetun ISBN
9780470848388

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