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Shin, Changhwan

Variation-Aware Advanced CMOS Devices and SRAM

Shin, Changhwan - Variation-Aware Advanced CMOS Devices and SRAM, ebook

138,35€

Ebook, PDF with Adobe DRM
ISBN: 9789401775977
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Table of contents

1. Introduction: Barriers Preventing CMOS Device Technology from Moving Forward
Changhwan Shin

Part I. Understanding of Process-Induced Random Variation

2. Line Edge Roughness (LER)
Changhwan Shin

3. Random Dopant Fluctuation (RDF)
Changhwan Shin

4. Work Function Variation (WFV)
Changhwan Shin

Part II. Variation-Aware Advanced CMOS Devices

5. Tri-Gate MOSFET
Changhwan Shin

6. Quasi-Planar Trigate (QPT) Bulk MOSFET
Changhwan Shin

7. Tunnel FET (TFET)
Changhwan Shin

Part III. Static Random Access Memory (SRAM) Based on Advanced CMOS Devices

8. Applications in Static Random Access Memory (SRAM)
Changhwan Shin

Keywords: Physics, Electronic Circuits and Devices, Circuits and Systems, Semiconductors, Electronics and Microelectronics, Instrumentation

Author(s)
Publisher
Springer
Publication year
2016
Language
en
Edition
1
Series
Springer Series in Advanced Microelectronics
Category
Natural Sciences
Format
Ebook
eISBN (PDF)
9789401775977
Printed ISBN
978-94-017-7595-3

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