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Li, Zhiqiang

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Li, Zhiqiang - The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices, ebook

107,60€

Ebook, PDF with Adobe DRM
ISBN: 9783662496831
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Table of contents

1. Introduction
Zhiqiang Li

2. Ge-based Schottky Barrier Height Modulation Technology
Zhiqiang Li

3. Metal Germanide Technology
Zhiqiang Li

4. Contact Resistance of Ge Devices
Zhiqiang Li

5. Conclusions and Prospects
Zhiqiang Li

Keywords: Physics, Semiconductors, Electronic Circuits and Devices, Nanoscale Science and Technology, Solid State Physics

Author(s)
Publisher
Springer
Publication year
2016
Language
en
Edition
1
Series
Springer Theses
Category
Natural Sciences
Format
Ebook
eISBN (PDF)
9783662496831
Printed ISBN
978-3-662-49681-7

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