Li, Zhiqiang
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Table of contents
1. Introduction
Zhiqiang Li
2. Ge-based Schottky Barrier Height Modulation Technology
Zhiqiang Li
3. Metal Germanide Technology
Zhiqiang Li
4. Contact Resistance of Ge Devices
Zhiqiang Li
5. Conclusions and Prospects
Zhiqiang Li
Keywords: Physics, Semiconductors, Electronic Circuits and Devices, Nanoscale Science and Technology, Solid State Physics
- Author(s)
- Li, Zhiqiang
- Publisher
- Springer
- Publication year
- 2016
- Language
- en
- Edition
- 1
- Series
- Springer Theses
- Category
- Natural Sciences
- Format
- Ebook
- eISBN (PDF)
- 9783662496831
- Printed ISBN
- 978-3-662-49681-7
