Nazarov, Alexei
Semiconductor-On-Insulator Materials for Nanoelectronics Applications
1. Germanium Processing
H. Gamble, B. M. Armstrong, P. T. Baine, Y. H. Low, P. V. Rainey, S. J. N. Mitchell, D. W. McNeill
2. Low-Temperature Fabrication of
C. A. Colinge, K. Y. Byun, I. P. Ferain, R. Yu, M. Goorsky
3. Engineering Pseudosubstrates with Porous Silicon Technology
N. P. Blanchard, A. Boucherif, Ph. Regreny, A. Danescu, H. Magoariec, J. Penuelas, V. Lysenko, J.-M. Bluet, O. Marty, G. Guillot, G. Grenet
4. Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers
A. Lecestre, E. Dubois, A. Villaret, T. Skotnicki, P. Coronel, G. Patriarche, C. Maurice
5. SOI CMOS: A Mature and Still Improving Technology for RF Applications
Jean-Pierre Raskin
6. Silicon-based Devices and Materials for Nanoscale FETs
Francis Balestra
7. FinFETs and Their Futures
N. Horiguchi, B. Parvais, T. Chiarella, N. Collaert, A. Veloso, R. Rooyackers, P. Verheyen, L. Witters, A. Redolfi, A. Keersgieter, S. Brus, G. Zschaetzsch, M. Ercken, E. Altamirano, S. Locorotondo, M. Demand, M. Jurczak, W. Vandervorst, T. Hoffmann, S. Biesemans
8. Ultrathin Body Silicon on Insulator Transistors for 22nm Node and Beyond
T. Poiroux, F. Andrieu, O. Weber, C. Fenouillet-Béranger, C. Buj-Dufournet, P. Perreau, L. Tosti, L. Brevard, O. Faynot
9. Ultrathin n-Channel and p-Channel SOI MOSFETs
F. Gámiz, L. Donetti, C. Sampedro, A. Godoy, N. Rodríguez, F. Jiménez-Molinos
10. Junctionless Transistors: Physics and Properties
J. P. Colinge, C. W. Lee, N. Dehdashti Akhavan, R. Yan, I. Ferain, P. Razavi, A. Kranti, R. Yu
11. Gate Modulated Resonant Tunneling Transistor (RT-FET): Performance Investigation of a Steep Slope, High On-Current Device Through 3D Non-Equilibrium Green Function Simulations
Aryan Afzalian, Jean-Pierre Colinge, Denis Flandre
12. Ohmic and Schottky Contact CNTFET: Transport Properties and Device Performance Using Semi-classical and Quantum Particle Simulation
Huu-Nha Nguyen, Damien Querlioz, Arnaud Bournel, Sylvie Retailleau, Philippe Dollfus
13. Quantum Simulation of Silicon-Nanowire FETs
Marco Pala
14. Single Dopant and Single Electron Effects in CMOS Devices
M. Sanquer, X. Jehl, M. Pierre, B. Roche, M. Vinet, R. Wacquez
15. SOI MOSFET Transconductance Behavior from Micro to Nano Era
J. A. Martino, P. G. D. Agopian, E. Simoen, C. Claeys
16. Investigation of Tri-Gate FinFETs by Noise Methods
N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys
17. Mobility Characterization in Advanced FD-SOI CMOS Devices
G. Ghibaudo
18. Special Features of the Back-Gate Effects in Ultra-Thin Body SOI MOSFETs
T. Rudenko, V. Kilchytska, J.-P. Raskin, A. Nazarov, D. Flandre
19. SOI Nanowire Transistors for Femtomole Electronic Detectors of Single Particles and Molecules in Bioliquids and Gases
V. P. Popov, O. V. Naumova, Yu. D. Ivanov
20. Sensing and MEMS Devices in Thin-Film SOI MOS Technology
J.-P. Raskin, L. Francis, D. Flandre
21. Floating-Body SOI Memory: The Scaling Tournament
M. Bawedin, S. Cristoloveanu, A. Hubert, K. H. Park, F. Martinez
22. A Selection of SOI Puzzles and Tentative Answers
S. Cristoloveanu, M. Bawedin, K.-I. Na, W. Den Daele, K.-H. Park, L. Pham-Nguyen, J. Wan, K. Tachi, S.-J. Chang, I. Ionica, A. Diab, Y.-H. Bae, J. A. Chroboczek, A. Ohata, C. Fenouillet-Beranger, T. Ernst, E. Augendre, C. Royer, A. Zaslavsky, H. Iwai
Keywords: Engineering, Nanotechnology and Microengineering, Nanotechnology, Semiconductors, Characterization and Evaluation of Materials
- Author(s)
- Nazarov, Alexei
- Colinge, J.-P.
- Balestra, Francis
- Raskin, Jean-Pierre
- Gamiz, Francisco
- Lysenko, V.S.
- Publisher
- Springer
- Publication year
- 2011
- Language
- en
- Edition
- 1
- Series
- Engineering Materials
- Page amount
- 9 pages
- Category
- Technology, Energy, Traffic
- Format
- Ebook
- eISBN (PDF)
- 9783642158681