Semiconductor-On-Insulator Materials for Nanoelectronics Applications

1. Germanium Processing
H. Gamble, B. M. Armstrong, P. T. Baine, Y. H. Low, P. V. Rainey, S. J. N. Mitchell, D. W. McNeill

2. Low-Temperature Fabrication of Germanium-on-Insulator Using Remote Plasma Activation Bonding and Hydrogen Exfoliation
C. A. Colinge, K. Y. Byun, I. P. Ferain, R. Yu, M. Goorsky

3. Engineering Pseudosubstrates with Porous Silicon Technology
N. P. Blanchard, A. Boucherif, Ph. Regreny, A. Danescu, H. Magoariec, J. Penuelas, V. Lysenko, J.-M. Bluet, O. Marty, G. Guillot, G. Grenet

4. Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers
A. Lecestre, E. Dubois, A. Villaret, T. Skotnicki, P. Coronel, G. Patriarche, C. Maurice

5. SOI CMOS: A Mature and Still Improving Technology for RF Applications
Jean-Pierre Raskin

6. Silicon-based Devices and Materials for Nanoscale FETs
Francis Balestra

7. FinFETs and Their Futures
N. Horiguchi, B. Parvais, T. Chiarella, N. Collaert, A. Veloso, R. Rooyackers, P. Verheyen, L. Witters, A. Redolfi, A. Keersgieter, S. Brus, G. Zschaetzsch, M. Ercken, E. Altamirano, S. Locorotondo, M. Demand, M. Jurczak, W. Vandervorst, T. Hoffmann, S. Biesemans

8. Ultrathin Body Silicon on Insulator Transistors for 22nm Node and Beyond
T. Poiroux, F. Andrieu, O. Weber, C. Fenouillet-Béranger, C. Buj-Dufournet, P. Perreau, L. Tosti, L. Brevard, O. Faynot

9. Ultrathin n-Channel and p-Channel SOI MOSFETs
F. Gámiz, L. Donetti, C. Sampedro, A. Godoy, N. Rodríguez, F. Jiménez-Molinos

10. Junctionless Transistors: Physics and Properties
J. P. Colinge, C. W. Lee, N. Dehdashti Akhavan, R. Yan, I. Ferain, P. Razavi, A. Kranti, R. Yu

11. Gate Modulated Resonant Tunneling Transistor (RT-FET): Performance Investigation of a Steep Slope, High On-Current Device Through 3D Non-Equilibrium Green Function Simulations
Aryan Afzalian, Jean-Pierre Colinge, Denis Flandre

12. Ohmic and Schottky Contact CNTFET: Transport Properties and Device Performance Using Semi-classical and Quantum Particle Simulation
Huu-Nha Nguyen, Damien Querlioz, Arnaud Bournel, Sylvie Retailleau, Philippe Dollfus

13. Quantum Simulation of Silicon-Nanowire FETs
Marco Pala

14. Single Dopant and Single Electron Effects in CMOS Devices
M. Sanquer, X. Jehl, M. Pierre, B. Roche, M. Vinet, R. Wacquez

15. SOI MOSFET Transconductance Behavior from Micro to Nano Era
J. A. Martino, P. G. D. Agopian, E. Simoen, C. Claeys

16. Investigation of Tri-Gate FinFETs by Noise Methods
N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys

17. Mobility Characterization in Advanced FD-SOI CMOS Devices
G. Ghibaudo

18. Special Features of the Back-Gate Effects in Ultra-Thin Body SOI MOSFETs
T. Rudenko, V. Kilchytska, J.-P. Raskin, A. Nazarov, D. Flandre

19. SOI Nanowire Transistors for Femtomole Electronic Detectors of Single Particles and Molecules in Bioliquids and Gases
V. P. Popov, O. V. Naumova, Yu. D. Ivanov

20. Sensing and MEMS Devices in Thin-Film SOI MOS Technology
J.-P. Raskin, L. Francis, D. Flandre

21. Floating-Body SOI Memory: The Scaling Tournament
M. Bawedin, S. Cristoloveanu, A. Hubert, K. H. Park, F. Martinez

22. A Selection of SOI Puzzles and Tentative Answers
S. Cristoloveanu, M. Bawedin, K.-I. Na, W. Den Daele, K.-H. Park, L. Pham-Nguyen, J. Wan, K. Tachi, S.-J. Chang, I. Ionica, A. Diab, Y.-H. Bae, J. A. Chroboczek, A. Ohata, C. Fenouillet-Beranger, T. Ernst, E. Augendre, C. Royer, A. Zaslavsky, H. Iwai

Keywords: Engineering, Nanotechnology and Microengineering, Nanotechnology, Semiconductors, Characterization and Evaluation of Materials