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Ehrentraut, Dirk

Technology of Gallium Nitride Crystal Growth

Ehrentraut, Dirk - Technology of Gallium Nitride Crystal Growth, ebook

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ISBN: 9783642048302
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Table of contents

1. Development of the Bulk GaN Substrate Market
Andrew D. Hanser, Keith R. Evans

2. Hydride Vapor Phase Epitaxy of GaN
Akinori Koukitu, Yoshinao Kumagai

3. Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds
B. Łucznik, B. Pastuszka, G. Kamler, I. Grzegory, S. Porowski

4. Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology
Y. Oshima, T. Yoshida, T. Eri, K. Watanabe, M. Shibata, T. Mishima

5. Nonpolar and Semipolar GaN Growth by HVPE
Paul T. Fini, Benjamin A. Haskell

6. High Growth Rate MOVPE
K. Matsumoto, H. Tokunaga, A. Ubukata, K. Ikenaga, Y. Fukuda, Y. Yano, T. Tabuchi, Y. Kitamura, S. Koseki, A. Yamaguchi, K. Uematsu

7. Ammonothermal Growth of GaN Under Ammono-Basic Conditions
R. Doradziński, R. Dwiliński, J. Garczyński, L. P. Sierzputowski, Y. Kanbara

8. A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method
Tadao Hashimoto, Shuji Nakamura

9. Acidic Ammonothermal Growth Technology for GaN
Dirk Ehrentraut, Yuji Kagamitani

10. High Pressure Solution Growth of Gallium Nitride
Michal Boćkowski, Pawel Strąk, Izabella Grzegory, Sylwester Porowski

11. A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal
Dirk Ehrentraut, Elke Meissner

12. Low Pressure Solution Growth of Gallium Nitride
E. Meissner, S. Hussy, J. Friedrich

13. Optical Properties of GaN Substrates
Shigefusa F. Chichibu

14. Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy
Filip Tuomisto

Keywords: Physics, Crystallography, Optical and Electronic Materials

Author(s)
 
 
Publisher
Springer
Publication year
2010
Language
en
Edition
1
Series
Springer Series in Materials Science
Page amount
21 pages
Category
Natural Sciences
Format
Ebook
eISBN (PDF)
9783642048302

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