Hall, Steve
Nanoscaled Semiconductor-on-Insulator Structures and Devices
1. Status and trends in SOI nanodevices
Francis Balestra
2. Non-Planar Devices for Nanoscale CMOS
Max C. Lemme, H. D. B. Gottlob, Heinrich Kurz
3. High-? Dielectric Stacks for Nanoscaled SOI Devices
Steve Hall, O. Buiu, I. Z. Mitrovic, Y. Lu, W. M. Davey
4. Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogen Transfer
Vladimir Popov, Ida Tyschenko, Alexander Cherkov, Matthias Voelskow
5. Fluorine –Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrates
Huda Abdel Wahab El Mubarek, Peter Ashburn
6. Suspended Silicon-On-Insulator Nanowires for the Fabrication of Quadruple Gate MOSFETs
Vikram Passi, Benoit Olbrechts, Jean-Pierre Raskin, Jens Bolten, Thomas Mollenhauer, Thorsten Wahlbrink, Max C. Lemme, Heinrich Kurz
7. Integration of silicon Single-Electron Transistors Operating at Room Temperature
Toshiro Hiramoto
8. SiGe Nanodots in Electro-Optical SOI Devices
Anatoly V. Dvurechenskii, A. I. Yakimov, N. P. Stepina, V. V. Kirienko, P. L. Novikov
9. Nanowire Quantum Effects in Trigate SOI MOSFETs
Jean-Pierre Colinge
10. Semiconductor Nanostructures and Devices
Joachim Knoch, Hans Lüth
11. MuGFET CMOS Process with Midgap Gate Material
W. Xiong, C. R. Cleavelin, T. Schulz, K. Schrüfer, P. Patruno, Jean-Pierre Colinge
12. Doping Fluctuation Effects in Multiple-Gate SOI MOSFETs
C. A. Colinge, W. Xiong, C. R. Cleavelin, Jean-Pierre Colinge
13. SiGeC HBTs: impact of C on Device Performance
I. Z. Mitrovic, Huda Abdel Wahab El Mubarek, O. Buiu, Steve Hall, Peter Ashburn, J. Zhang
14. Noise Research of Nanoscaled SOI Devices
N. Lukyanchikova
15. Electrical Characterization and Special Properties of FINFET Structures
T. Rudenko, Valeria Kilchytska, N. Collaert, Alexei N. Nazarov, M. Jurczak, Denis Flandre
16. Substrate Effect on the Output Conductance Frequency Response of SOI MOSFETs
Valeria Kilchytska, David Levacq, Dimitri Lederer, Guillaume Pailloncy, Jean-Pierre Raskin, Denis Flandre
17. Investigation of Compressive Strain Effects Induced by STI and ESL
S. Zaouia, S. Cristoloveanu, A. H. Perera
18. Charge Trapping Phenomena in Single Electron NVM SOI Devices Fabricated by a Self-Aligned Quantum DOT Technology
Alexei N. Nazarov, Vladimir S. Lysenko, Xiaohui Tang, Nicolas Reckinger, Vincent Bayot
19. Variability in Nanoscale UTB SOI Devices and its Impact on Circuits and Systems
Asen Asenov, Khairulmizam Samsudin
20. Electron Transport in Silicon-on-Insulator Nanodevices
F. Gámiz, A. Godoy, C. Sampedro
21. All Quantum Simulation of Ultrathin SOI MOSFETs
A. Orlikovsky, V. Vyurkov, V. Lukichev, I. Semenikhin, A. Khomyakov
22. Resonant Tunneling Devices on SOI Basis
Bogdan Majkusiak
23. Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions
Viktor Sverdlov, Enzo Ungersboeck, Hans Kosina
24. Three-Dimensional (3-D) Analytical Modeling of the Threshold Voltage, DIBL and Subthreshold Swing of Cylindrical Gate all Around Mosfets
H. A. El Hamid, B. Iñguez, Jaume Roig
Keywords: Chemistry, Optical and Electronic Materials, Nanotechnology, Electronic and Computer Engineering, Electronics and Microelectronics, Instrumentation
- Author(s)
- Hall, Steve
- Lysenko, Vladimir S.
- Nazarov, Alexei N.
- Publisher
- Springer
- Publication year
- 2007
- Language
- en
- Edition
- 1
- Series
- NATO Science for Peace and Security Series
- Page amount
- 382 pages
- Category
- Natural Sciences
- Format
- Ebook
- eISBN (PDF)
- 9781402063800